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| SMD Type Silicon NPN epitaxial planar type 2SD1254 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 Large collector current IC. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 130 80 7 3 6 30 1.3 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICBO IEBO hFE Testconditons IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 0.1 A VCE(sat) IC = 2 A, IB = 0.1 A VBE(sat) IC = 2 A, IB = 0.1 A fT ton tstg tf VCE = 10 V, IC = 0.5 A, f = 10 MHz IC=0.5A IB1=-IB2=50 mA VCC=50V 30 0.5 2.5 0.15 60 45 0.5 1.5 V V MHz is is is Min 80 10 50 260 Typ Max Unit V iA iA hFE Classification Rank hFE R 60 120 Q 90 180 P 130 260 3.80 www.kexin.com.cn 1 |
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